MFS结构钛酸铋薄膜的C-V特性研究  

Study of the C-V characteristics of the In/ Bi_4Ti_3O_(12)/p-Si structure

作　　者：郭冬云[1] 王耘波[1] 于军[1] 王雨田[2] 王宝义[2] 魏龙[2] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]中国科学院高能物理研究所核分析室,北京100039

出　　处：《功能材料》2004年第2期180-182,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60171012)

摘　　要：　利用sol gel方法在p Si(111)基底上制备钛酸铋薄膜。测量不同退火温度下得到的In/BTO/p Si结构的C V曲线,测量结果表明制备的MFS结构钛酸铋薄膜在合适的制备工艺下可望实现极化型存储。The capacitance with the In/ Bi_4Ti_3O_(12)/p-Si structure was fabricated by the sol-gel method. The capacitance-voltage curves of the MFS structures have been measured and analyzed. The results illustrate that the mode of switching was the polarization type and was the desired mode for the memory operation. Measured at 1MHz frequency, the memory window of In/ Bi_4Ti_3O_(12)/p-Si annealed at 650℃ for 30min was about 3.5V.

关 键 词：MFS结构 钛酸铋薄膜 C-V特性 制备 铁电材料 FFET 信息存储 

分 类 号：TN304.9[电子电信—物理电子学]