一种低温漂CMOS带隙基准电压源的设计  

Design of a CMOS Band-Gap Voltage Reference with Low Drift of Temperature

作　　者：陈碧[1] 罗岚[1] 周帅林[1] 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,南京210018

出　　处：《电子器件》2004年第1期79-82,共4页Chinese Journal of Electron Devices

摘　　要：阐述了一种采用了一阶温度补偿技术设计的CMOS带隙基准电压源电路。该电路采用Chartered0.25 μm N阱CMOS工艺实现。基于HSPICE的仿真结果表明:当温度在-25℃到85℃之间变化时该电路输出电压的温度系数为12.10^(-6)/℃、。在3.3 V电源电压下的功耗为3.8 mW,属于低温漂、低功耗的基准电压源。A CMOS band-gap reference circuit with first-order temperature compensation is presented. Prototype of the band-gap reference is fabricated using the 0.25 μm N-well CMOS process of Chartered Corp. The simulation results for this circuit using HSPICE show that the temperature coefficient is about 12·10-6/℃ in the range - 25 to 85℃。 The power consumption is 3.8 mW at 3.3 V power supply. It' s a low temperature coefficients and low power consumption band - gap voltage reference.

关 键 词：带隙参考电压源 温度补偿 电源抑制比 

分 类 号：TN402[电子电信—微电子学与固体电子学]