介质薄膜的制备及其电性能的测试分析  

Deposition of Dielectric Film and Test of It's Electric Performance

作　　者：崔红玲[1] 杨邦朝[1] 杜小松[1] 滕林[1] 周鸿仁[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《电子元件与材料》2004年第5期39-40,51,共3页Electronic Components And Materials

基　　金：电子预研基金(AW030412)

摘　　要：以Al_2O_3薄膜为例,介绍了用电子束蒸发制备介质薄膜的工艺。研究了不同退火条件下Al_2O_3薄膜的电性能,优化出最佳的热处理条件为400℃、氧气气氛中,热处理3 h。并对制得的Al_2O_3薄膜进行了SEM表面和断面分析,结果表明制得的Al_2O_3薄膜较烧结的Al_2O_3基板致密。With Al_2O_3 film deposited by electron-beam evaporation as an example, the technique of dielectric film was introduced. In different annealing factors, electric performance of the Al_2O_3 film was tested and analyzed, which it is excellent to turn the heat handles term: anneaed at 400℃ for 3h in O_2. Along with SEM surface analysis, it was turned the thin film of Al_2O_3 than the Al_2O_3 of a material is fine.

关 键 词：二氧化二铝薄膜 电子束蒸发 电性能测试 电阻率 

分 类 号：TN704[电子电信—电路与系统]