钝化边的制作及其对不同尺寸自对准InGaP/GaAs HBT性能的影响  

Passivation Ledge Fabrication and Its Effect on Performance of Self-Aligned InGaP/GaAs HBT with Variety of Emitter Sizes

作　　者：郑丽萍[1] 刘新宇[1] 袁志鹏[1] 孙海锋[1] 和致经[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子中心,北京100029

出　　处：《Journal of Semiconductors》2004年第3期312-315,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :60 14 60 0 1)~~

摘　　要：采用全耗尽的 In Ga P材料在基区 Ga As表面形成钝化边 (passivation ledge)的方法 ,研制出了带钝化边的自对准 In Ga P/Ga As异质结双极晶体管 (HBT) .通过对不同尺寸、有无钝化边器件性能的比较得出 :钝化边对提高小尺寸器件的直流增益有明显效果 ,对器件的高频特性无明显影响 .此外 ,钝化边的形成改善了所有实验器件的长期可靠性 .The self-aligned InGaP/GaAs heterojunction bipolar transistors (HBTs) with passivation ledge are fabricated.The performances of the HBTs with and without passivation ledge are compared.The results show that they have the same high-frequency performance both for the devices without passivation ledge and for the devices with passivation ledge.But the improvement of the current gain is different for the devices with different emitter sizes.The devices with smaller size of emitter are more sensitive to the passivation ledge.Moreover,the reliability of all devices with the passivation ledge is improved.

关 键 词：钝化边 直流增益 异质结双极晶体管 

分 类 号：TN304[电子电信—物理电子学]