衬底负偏压对溅射Ta_2O_5薄膜晶化温度及介电性能的影响  

Effect of Substrate Bias on Crystallization Temperature and Dielectric Properties of Sputtered Ta_2O_5 Films

作　　者：许仕龙[1] 朱满康[1] 黄安平[1] 王波[1] 严辉[1] 

机构地区：[1]北京工业大学新型功能材料教育部重点实验室,北京100022

出　　处：《无机材料学报》2004年第3期701-704,共4页Journal of Inorganic Materials

基　　金：北京市自然科学基金(2021003)

摘　　要：采用磁控溅射法,在衬底温度为620℃时,通过引入合适的衬底负偏压(100～200V),获得了结晶良好的Ta_2O_5薄膜,衬底负偏压增强了正离子对衬底表面的轰击作用,加速了其在衬底表面的松弛扩散效应,从而降低了Ta_2O_5薄膜的晶化温度,改善了其结晶性。同时,C—V测试结果表明:衬底负偏压进一步改善了Ta_2O_5薄膜的介电性能.At the substrate temperature of 620degreesC, crystalline Ta2O5 films were sputtered by introducing suitable negative substrate bias of 100similar to200V. It was thought that the ion bombardment to the substrate was enhanced with introducing the negative substrate bias. The diffusion and looseness of deposited particles on the surface of substrate were accelerated. Consequently, the crystallization of Ta2O5 films was improved and the crystallization temperature was lowered. Meanwhile, the C - V result indicated that the dielectric properties of Ta2O5 films were further improved by introducing negative substrate bias.

关 键 词：TA2O5 介电薄膜 晶化温度 衬底负偏压 

分 类 号：O484[理学—固体物理]