MISiC氢敏传感器物理模型及特性模拟  

Physical Model and Simulation of MISiC Hydrogen-Sensitive Sensors

作　　者：徐静平[1] 韩弼[1] 黎沛涛[2] 钟德刚[1] 吴海平[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]香港大学,电子电机电子工程系

出　　处：《传感技术学报》2004年第1期31-35,共5页Chinese Journal of Sensors and Actuators

基　　金：湖北省自然科学基金资助项目 (2 0 0 0J15 8)

摘　　要：分析了金属 绝缘体 SiC(MISiC)肖特基势垒二极管 (SBD)气体传感器的响应机理 ,将SBD热电子发射理论和氢吸附 解吸理论相结合 ,通过考虑势垒高度调制效应以及理想因子随外界条件的变化 ,建立了MISiCSBD气体传感器物理模型 ,模拟结果与实验十分吻合。采用此模型 ,分析了器件特性与绝缘层厚度的关系 ,并在灵敏度、可靠性和工作电流 /电流分辨率诸因素之间其进行了优化设计 ,对于 30 0℃左右的高温应用 ,确定出最佳绝缘层厚度为2～ 2 .3nm。Response mechanisms of metal-insulator-SiC (MISiC) Schottky-barrier-diode (SBD) gas sensors are analyzed. A physical model of MISiC SBD gas sensors is established by combining SBD thermionic emission with adsorption/desorption principle of hydrogen,and considering modulation effects of barrier height and ideal factor’s change with exterior conditions. Simulated results are in good agreement with experimental results. The relationship between device performances and insulator thickness is investigated using the model, and an optimum thickness of 2～2.3 nm for high-temperature application of around 300 oC is obtained by taking account of tradeoff among sensitivity, reliability and operation current/resolution.

关 键 词：MISiC 肖特基势垒二极管 气体传感器 SBD 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]