不同结构的碲镉汞长波光伏探测器的暗电流研究  

STUDY OF DARK CURRENT FOR MERCURY CADMIUM TELLURIDE LONG-WAVELENGTH PHOTODIODE DETECTOR WITH DIFFERENT STRUCTURES

作　　者：叶振华[1] 胡晓宁[1] 张海燕[1] 廖清君[1] 李言谨[1] 何力[1] 

机构地区：[1]中国科学院上海技术物理研究所材料与器件中心,上海200083

出　　处：《红外与毫米波学报》2004年第2期86-90,共5页Journal of Infrared and Millimeter Waves

基　　金：中国科学院知识创新工程资助项目

摘　　要：对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 .与n on p平面结器件相比 ,原位掺杂的n+ n p台面异质结器件得到较高的零偏动态阻抗 面积值 (R0 A) .通过与实验数据拟合 ,从理论上计算了这两种结构的器件在不同温度下的R0 A和在不同偏压下的暗电流 。The dark current mechanism of B (+) -implanted n-on-p planar photodiode and Indium doped n (+) -n-p hetero-junction mesa photodiode formed in-situ by molecular beam epitaxy for Mercury-Cadmium-Telluride long-wavelength detector was compared and analyzed. It was found that n (+) -n-p hetero-juction-mesa photodiode doped in-situ had higher zero-bias resistance-area product (R(0)A) than n-on-p planar photodiode in our experiment. By fitting with experimental data, ROA at different temperature and the dark current at different bias voltage of the two long-wavelength devices were calculated theoretically, and some correlated parameters were also achieved.

关 键 词：光伏探测器 暗电流 碲镉汞材料 异质结 分子束外延技术 铟掺杂 红外探测器 

分 类 号：TN215[电子电信—物理电子学]