50nm及50nm以下同步辐射X射线光刻光束线设计  

Synchrotron radiation X-ray lithography beamline design for 50nm resolution and below

作　　者：谢常青[1] 陈大鹏[1] 李兵[1] 叶甜春[1] 伊福廷[2] 彭良强[2] 韩勇[2] 张菊芳[2] 

机构地区：[1]中国科学院微电子研究中心,北京100010 [2]中国科学院高能物理研究所,北京100039

出　　处：《核技术》2004年第5期321-324,共4页Nuclear Techniques

摘　　要：X射线光刻相对于其他下一代光刻技术而言有许多优点,比如其工艺宽容度大、成品率高、景深大、曝光视场大、成本低等,更为重要的是,其技术已经比较成熟。对于 100nm 同步辐射 X 射线光刻系统而言,它采用的波长通常为 0.7—1.0nm,而当光刻分辨率达到 50nm 以下时,采用的同步辐射 X 射线波长范围应该为 0.2—0.4 nm。探讨了在北京同步辐射 3B1A 光刻束线上进行 50nm X 射线光刻的可能性。Compared to other Next Generation Lithography ( NGL) techniques, X-ray lithography has many ad- vantages, such as large process latitude, high throughput, extremely long depth of focus, large exposure field sizes, and low cost, and the more important thing is that X-ray lithography technology is relatively mature. For 100 nm resolution synchrotron radiation X-ray lithography system, its wavelength is in the range of 0.7—1.0 nm; and when the resolution is below 50 nm, its wavelength should be in 0.2 nm to 0.4 nm. In this paper, the possibility of designing a 50 nm resolution X-ray lithography system for Beijing Synchrotron Radiation Facility 3B1A beamline is discussed.

关 键 词：X射线光刻 同步辐射 束衍生法 光刻分辨率 

分 类 号：TN305.7[电子电信—物理电子学]