晶向对InGaP/GaAs HBT性能的影响  

Orientation Effects on InGaP/GaAs HBT

作　　者：石瑞英[1] 刘训春[2] 孙海峰[2] 袁志鹏[2] 

机构地区：[1]四川大学物理系,成都610064 [2]中国科学院微电子中心,北京100029

出　　处：《Journal of Semiconductors》2004年第4期446-449,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目 (编号 :G2 0 0 0 0 683 0 40 3 )~~

摘　　要：在对 In Ga P/ Ga As HBT特性的研究中发现 ,发射极长边与主对准边垂直 ([0 1 1 ]方向 )和平行 ([0 1 1 ]方向 )放置时 ,其直流电流增益和截止频率是不同的 .[0 1 1 ]方向的直流电流增益远远大于 [0 1 1 ]方向 ,而它的截止频率则略小于 [0 1 1 ]方向 .文献中认为电流增益的不同是压电效应产生的 ,但这种观点并不能很好地解释截止频率的晶向依赖性 .Orientation effect on self-aligned InGaP/GaAs HBT is described.The DC current gain of the transistor with the emitter long edge parallel to orientation is greater than that of parallel to .But it shows slightly better RF performance for orientation with .f. t 69GHz compared to .f. t of 62GHz for the orientation.In previous paper,the DC current gain difference of between the two orientation transistors is attributed to the piezoelectric effect,but the difference of .f. t is not explained.It is proposed that the dependence of the characteristics is attributed to both piezoelectric effect and the difference between etched pattern in different directions.

关 键 词：INGAP/GAAS HBT晶向效应 直流电流增益 截止频率 压电效应 侧向腐蚀 

分 类 号：TN321[电子电信—物理电子学]