新型双异质结双平面掺杂功率PHEMT  

A New Kind of Double Heterojunction Double Planar Doped Power PHEMTs

作　　者：陈震[1] 和致经[1] 魏珂[1] 刘新宇[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子中心,北京100029

出　　处：《Journal of Semiconductors》2004年第4期454-457,共4页半导体学报（英文版）

摘　　要：设计并制作了双异质结双平面掺杂的 Al0 .2 4 Ga0 .76 As/ In0 .2 2 Ga0 .78As/ Al0 .2 4 Ga0 .76 As功率 PHEMT器件 ,采用双选择腐蚀栅槽结构 ,有效提高了 PHEMT器件的输出电流和击穿电压 .对于 1μm栅长的器件 ,最大输出电流为5 0 0 m A/ mm ,跨导为 2 75 m S/ m m,阈值电压为 - 1 .4 V,最大栅漏反向击穿电压达到了 33V .研究结果表明 ,在栅源间距一定时 ,栅漏间距对于器件的输出电流、跨导和击穿电压有很大关系 ,是设计功率 PHEMT的关键之一 .Double heterojunction double planar doped Al 0.24Ga 0.76As/In 0.22Ga 0.78As/Al 0.24Ga 0.76As power PHEMTs is designed and fabricated,in which double selective gate recess structure is developed to provide higher output current and breakdown voltage for 1μm gate length device.Good device characteristics are achieved:the maximum drain current .I. max =500mA/mm,the peak transconductance .G. m=275mS/mm,the pinchoff voltage .V. p=-1.4V,and the maximum gate-drain reverse breakdown voltage BV gd =33V.The experiment result also shows that the gate-drain distance has an important influence on the output current,transconductance,and breakdown voltage when the gate-source distance is constant,which is a key in designing power PHEMTs.

关 键 词：PHEMT 双平面掺杂 双选择腐蚀栅槽 击穿电压 

分 类 号：TN386[电子电信—物理电子学]