TbCo非晶垂直磁化膜的磁各向异性来源研究  

Studies on the Origin of the Perpendicular Anisotropy in the TbCo Amorphous Films

作　　者：但旭[1] 黄致新[1] 李佐宜[2] 

机构地区：[1]华中师范大学物理科学与技术学院,武汉430079 [2]华中科技大学电子科学与技术系,武汉430074

出　　处：《信息记录材料》2004年第2期54-56,共3页Information Recording Materials

摘　　要：采用不加偏压的磁控溅射法制备了带有和不带有金属Cr底层的TbCo非晶垂直磁化膜 ,并对TbCo非晶垂直磁化膜的磁各向异性来源进行了研究。理论分析结果表明 ,TbCo非晶垂直磁化膜的垂直磁各向异性主要来自于Tb离子的非球对称分布电荷与膜内晶场之间的库仑相互作用以及膜内的应力。扫描电镜的观测结果表明 ,带有Cr底层的TbCo薄膜具有柱状结构。柱状结构的存在导致了其磁各向异性的增强。TbCo amorphous films with or without Cr underlayer were prepared by no -bias magnetron sputtering method. And the origin of the perpendicular magnetic anisotropy in these films was studied. Theoretic analysis showed that the main origin of the perpendicular magnetic anisotropy in TbCo amorphous films are the coulomb interaction between the aspheric distribution charges of Tb ions and the crystal field and the stress of the film. SEM micrographs showed that a columnar structure existed in TbCo films with Cr underlayer. It is considered that the columnar structure enhancing the perpendicular magnetic anisotropy of TbCo film.

关 键 词：TbCo 磁控溅射法 非晶垂直磁化膜 各向异性 非晶薄膜 磁光记录技术 

分 类 号：TQ591[化学工程—精细化工]