低温磁控溅射SnO_2:Sb透明导电膜的结构与导电性能  

STRUCTURE AND ELECTRONIC PROPERTIES FOR SnO_2:Sb FILMS PREPARED AT LOWER SUBSTRATE TEMPERATURE BY R.F. MAGNETRON SPUTTERING

作　　者：马瑾[1] 刘晓梅[2] 张士勇[3] 郝晓涛[1] 马洪磊[1] 

机构地区：[1]山东大学物理与微电子学院光电材料与器件研究所,济南250100 [2]山东大学计算机学院,济南250100 [3]长安大学基础部物理组,西安710064

出　　处：《太阳能学报》2004年第2期148-151,共4页Acta Energiae Solaris Sinica

基　　金：教育部科学技术研究重点项目(重点02165);教育部博士点基金项目(20020422056)

摘　　要：采用射频磁控溅射法在7059玻璃衬底上低温制备出锑掺杂的氧化锡(SnO2:Sb)透明导电膜,对薄膜的结构和电学性质进行了研究。制备薄膜为多晶膜,并且保持了纯二氧化锡的金红石结构,而且具有明显的(110)择优取向。最低电阻率为2×10-3Ω·cm,载流子浓度和迁移率分别为1 65×1020cm-3和19 0cm2·v-1·s-1。Transparent conducting SnO2:Sb films were deposited on 7059 glass substrates by RF magnetron sputtering technique. Polycrystalline SnO2:Sb films with rutile structure were prepared at low surbstrate mperature with resistivity as low as 2×10-3Ω&middotcm, carrier concentration as 1.65×1020cm-3 and mobility as 19 cm2&middotv-1&middots-1, respectively. The structure and electronic properties for the SnO2:Sb films were studied.

关 键 词：磁控溅射 SnO2:Sb薄膜 结构和电学性质 

分 类 号：TK51[动力工程及工程热物理—热能工程]