碲锌镉单晶体的(110)面蚀坑形貌观察  

Observation on Etch Pits on the (110) Faces of Cd_(1-x)Zn_xTe Crystals

作　　者：高德友[1] 赵北君[1] 朱世富[1] 王瑞林[1] 魏昭荣[1] 李含冬[1] 韦永林[1] 唐世红[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2004年第2期180-183,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(60276030);教育部博士点基金资助项目;四川省科技攻关重点项目(02GG009 010)

摘　　要：本文报道了一种能够在室温下择优腐蚀碲锌镉(CZT)单晶体(110)晶面的腐蚀液配方,并对富Cd生长的CZT晶体蚀坑形貌进行了扫描电镜观察。结果表明晶体(110)面腐蚀坑形状为三角形,并初步对蚀坑的成因进行了分析,估算出CZT(110)面蚀坑密度约为103～105/cm2数量级。这说明富Cd原料的改进布里奇曼法可以生长出低蚀坑密度的CZT单晶体。This paper reported a new etch-pits etchant, which is able to selectively etch (110) faces of Cd_(1-x)Zn_xTe (CZT) crystals. Here it was used to etch (110) faces of the Cd-riched CZT crystal. The results show that the shape of etch pits appears as triangle on the (110) face of the crystal by SEM observation. The formation reasons for the triangle etch pits were analyzed preliminarily.It is estimated that the etch pits density (EPD) on the (110) faces of the CZT crystals is at the order of 10~3-10~5/cm^2 magnitude. It is demonstrated that the Cd-riched starting materials can grow low EPD CZT single crystals by modified Bridgman method.

关 键 词：碲锌镉 单晶体 SEM形貌 腐蚀坑 密度 布里奇曼法 半导体材料 

分 类 号：O785[理学—晶体学] TN304.25[电子电信—物理电子学]