CdZnTe晶体的缺陷能级分析  

Analysis of the Defect Energy Level of CdZnTe Single Crystal

作　　者：韦永林[1] 朱世富[1] 赵北君[1] 王瑞林[1] 高德友[1] 魏昭荣[1] 李含东[1] 唐世红[1] 

机构地区：[1]四川大学材料科学系,成都610064

出　　处：《人工晶体学报》2004年第2期189-191,共3页Journal of Synthetic Crystals

基　　金：国家自然科学基金(60276030);教育部博士点基金资助项目;四川省科技攻关重点项目(02GG009 010)

摘　　要：通过测试富Cd原料无籽晶垂直布里奇曼法生长出的高阻Cd0.8Zn0.2Te(CZT)单晶体的I T特性曲线,利用热激活能原理来分析单晶体内的缺陷,结果得到晶体中有一个由镉空位引起的电子陷阱,其深度为0.539eV。由于俘获能级有较高的激活能,在常温下,价带上的载流子不会被激发,所以该晶体适用于制作室温核辐射探测器。另外还研究了CZT晶体在室温下的I V特性,测得采用该方法生长的CZT单晶体电阻率高达5.0×1010Ω·cm,制作的核辐射探测器在室温下获得了比较好的241Am59.5keV能谱。I-T property of the CdZnTe single crystal grown with rich Cd materials by unseeded vertical Bridgeman method was tested and analyzed by heat activation energy theory.The result shows that there is an electron trap with the energy level of 0.539eV in the CZT single crystal due to Cd vacancies. It adapts to making room nuclear radiation detector, since the trap has high activation energy.In addition, I-V property of the CZT was tested.It shows the resistivity of the CZT is 5.0×10^(10)Ω·cm. The radiation test to the detector made by as-grown CZT acquired energy spectrum for^(241)Am, the peak appearring at 59.5keV.

关 键 词：CDZNTE晶体 缺陷能级分析 布里奇曼法 激活能 俘获能级 电阻率 碲锌镉单晶体 

分 类 号：O77[理学—晶体学]