偏压对电弧离子镀沉积类金刚石膜的影响  

INFLUENCE OF BIAS VOLTAGE ON DIAMOND-LIKE CARBON FILM DEPOSITED BY ARC ION PLATING

作　　者：邹友生[1] 汪伟[2] 郑静地[1] 孙超[1] 黄荣芳[1] 闻立时[1] 

机构地区：[1]中国科学院金属研究所,沈阳110016 [2]中国科学院金属研究所沈阳材料科学国家(联合)实验室,沈阳110016

出　　处：《金属学报》2004年第5期537-540,共4页Acta Metallurgica Sinica

摘　　要：采用电弧离子镀方法,在Si(100)基底上沉积了类金刚石(DLC)膜,用激光Raman谱和X射线光电子能谱(XPS)对不同偏压下沉积的类金刚石膜的结构进行了分析。结果表明,Raman谱的D峰和G峰的强度之比,I_D/I_G随着脉冲负偏压的增加先减小后增大,sp^3键含量随着负偏压的增加先增加后减小。偏压为-200 V时,I_D/I_G值最小为0.70,sp^3键含量最大为26.7％。纳米压痕仪测量结果表明,随着脉冲负偏压增加,硬度和弹性模量先增加后下降,偏压为-200 V时,DLC膜的硬度和弹性模量最大,分别为30.8和250.1 GPa。The microstructures of the diamond-like carbon (DLC) films deposited on Si (100) substrate by using arc ion plating (AIP) under different pulse bias voltage were characterized using Raman spectra and X-ray photoelectron spectra (XPS). The results show that the ratio I-D/I-G decreases and sp(3) bond content increases with increasing pulse bias voltage firstly, and then the ratio I-D/I-G increases and sp(3) bond content decreases after the pulse bias voltage exceeding -200 V. The minimal ratio I-D/I-G, is 0.70 and the content of sp(3) bond is 26.7% at the bias voltage of -200 V. The hardness and modulus determined by using nanoindentation technique increase and then decrease with increasing pulse bias voltage. The hardness and modulus of the DLC films obtained at bias voltage of -200 V reaches a maximum value of 30.8 and 250.1 GPa, respectively.

关 键 词：类金刚石膜 电弧离子镀 脉冲偏压 结构 力学性能 

分 类 号：O484.4[理学—固体物理] TG174.44[理学—物理]