施主型界面态引起深亚微米槽栅PMOS特性的退化  

Degradation Induced by Donor Interface State for Deep-Sub-Micron Grooved-Gate PMOSFET

作　　者：任红霞[1] 张晓菊[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《Journal of Semiconductors》2004年第5期562-567,共6页半导体学报（英文版）

基　　金：国防预研基金 (No.99J8.1.1.DZD13 2);博士点基金(No.80 70 110 )资助项目~~

摘　　要：基于流体动力学能量输运模型 ,对沟道杂质浓度不同的槽栅和平面 PMOSFET中施主型界面态引起的器件特性的退化进行了研究 ,并与受主型界面态的影响进行了对比 .研究结果表明同样浓度的界面态在槽栅器件中引起的器件特性的漂移远大于平面器件 ,且 N型施主界面态密度对器件特性的影响远大于 P型界面态 ,N型施主界面态引起器件特性的退化趋势与 P型受主界面态相似 ,而 P型施主界面态则与 N型受主界面态相似 .沟道杂质浓度不同 。Based on the hydrodynamics energy transport model,the degradation induced by donor interface state is analyzed for deep submicron grooved gate and conventional planar PMOSFET with different channel doping density,and the results are compared with that induced by acceptor interface states.The simulation results indicate that the degradation induced by the same interface state density in grooved gate PMOSFET is larger than that in planar PMOSFET,and in both structure device,the impact of N type donor interface state on device performance is far larger than that of P type.It also manifests that the degradation is different for the device with different channel doping density.

关 键 词：槽栅PMOSFET 施主界面态密度 栅极特性 漏极电流驱动能力 特性退化 

分 类 号：TN386[电子电信—物理电子学]