CC双键对氟化非晶碳薄膜I-V特性的影响  

Effect of CC content on I-V characteristics of fluorinated amorphous carbon thin films

作　　者：叶超[1] 宁兆元[1] 程珊华[1] 辛煜[1] 许圣华[1] 

机构地区：[1]苏州大学物理科学与技术学院,苏州215006

出　　处：《物理学报》2004年第5期1496-1500,共5页Acta Physica Sinica

基　　金：江苏省高校省级重点实验室开放课题 (批准号 :KJS0 10 12 );国家自然科学基金 (批准号 :10 175 0 48)资助的课题~~

摘　　要：研究了电子回旋共振等离子体技术沉积的氟化非晶碳 (a_C :F)薄膜的电学性质 .发现对于不同C_Fx 含量的薄膜 ,CC含量的增大对薄膜的导电行为具有不同的影响 .薄膜的直流I_V特性呈现I =aV +bVn规律 ,是低场强区的欧姆导电和高场强区的空间电荷限流 (SCLC)组成的导电过程 .由于非晶材料的空间电荷限流与带尾态密度的分布密切相关 ,而a_C :F薄膜中CC的含量决定带尾态密度的分布 ,因此a_C :F薄膜在高场下的空间电荷限流是由薄膜中 CC 决定的导电过程 .The current-voltage characteristics of amorphous fluorinated carbon (a-C:F) films prepared by electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) are investigated. The different changes in electric conduction as CC content is increased are observed for the films with different C-F x composition. The I-V characteristic follows a nonlinear law of IaV+bV n (n>1). It shows that the ohmic conduction is dominated at low fields while the space charge limited currents (SCLCs) is dominated at high field. For a-C:F films, the space charge limited currents are relevant to density of state at band-tails controlled by CC bonds in the films.

关 键 词：氟化非晶碳薄膜 直流伏安特性 电子回旋共振等离子体技术 碳=碳双键 空间电荷限流 带尾态密度 

分 类 号：O484.4[理学—固体物理]