辉光放电电子束掺杂硼浅结  

Super-Shallow Junction formed by Electron Beam Doping Boron during Glow Discharge

作　　者：李秀琼[1] 王纯[1] 马祥彬 杨军[1] 

机构地区：[1]中国科学院微电子中心,北京650信箱100010

出　　处：《Journal of Semiconductors》1992年第7期448-452,T001,共6页半导体学报（英文版）

摘　　要：一种新的半导体掺杂方法——电子束掺杂法成功地用于实现掺硼浅结.它是用辉光放电电子束辐照涂敷杂质源的半导体表面,形成高浓度(≥10^(20)/cm^3)、浅结(≤0.1μm)掺杂层.损伤比离子注入的小.试制成功的太阳敏感器件性能优良.A new method of semiconductor doping—— doping by electron beam has been success-fully used to fabricate boron super-shallow junction. The semiconductor surface coated withboron sources was irradiated by electron beam produced during glow discharge to form adoping layer with high impurity concentration (>10^(20)cm^(-3)) and super-shallow junction(<0.1 μm). The lattice damage is much less serious than that prepared by ion implantation.A solar sensitive device with excellent performance was successfully fabricated.

关 键 词：电子束掺杂法 硼 浅结 半导体 

分 类 号：TN304.16[电子电信—物理电子学]