杂质对离子注入射程端缺陷的影响  

Influence of Impurities on End of Range Defect

作　　者：鲍希茂[1,2] 华雪梅[1,2] 袁远 洪建明[1,2] 

机构地区：[1]南京大学物理系,南京210008 [2]南京大学固体微结构实验室,南京210008

出　　处：《Journal of Semiconductors》1992年第8期493-498,T002,共7页半导体学报（英文版）

摘　　要：本文研究了注入杂质对预非晶化硅的射程端缺陷的影响.提出:在固相外延时,来自非晶层内的空位与来自射程端的硅间隙原子形成相向扩散流.注入的杂质可以俘获点缺陷,从而影响了点缺陷的相向扩散流,P促进射程末端缺陷的分解,而B促进其聚结.The influence of impurities on the end of range defers has been investigated. It is proposed that the opposite diffusion fluxes of point defects, the vacancies from amorphous region and theself-interstitials from end of range defect band, are resulted during solid-phase epitaxial grow-th. The implanted impurities are able to trap the point defects, and thereby affect the oppositediffusion fluxes of point defects. As a result, phosphorus promotes decomposition of the end ofrange defects, while boron enhances their agglutination.

关 键 词：离子注入 硅 非晶化 射程 缺陷 

分 类 号：TN304.12[电子电信—物理电子学]