移相掩模技术  

Phase-Shift Masking Technique

作　　者：孙再吉[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1992年第3期275-280,共6页Research & Progress of SSE

摘　　要：对光学微细加工技术中骤然崛起的移相掩模技术,从原理、掩模种类以及尚待解决的问题等方面作了较为详尽的介绍。 该技术由于大幅度提高分辨率、空间相干性和增大焦深,目前已用于0.2～0.3μm LSI的设计。The phase-shift masking technique has abruptly risen in the field of optical fine processing. The principle of this technique, sorts of the mask and problems to be solved are described in detail in this paper. Since this technique can greatly improve the resolution and space coherence, and increase the focus depth, the design of 0. 2~0. 3m LSI has already been completed.

关 键 词：移相掩模技术 集成电路 分辨率 

分 类 号：TN43[电子电信—微电子学与固体电子学]