多孔硅的能带与发光机制的研究与分析  

The Study on the Energy Band and the Luminescence Mechanism of the Porous Silicon

作　　者：丁德宏[1] 张宏[1] 付世[1] 姚朋军[1] 范军[1] 张宏庆[1] 沈桂芬[1] 

机构地区：[1]辽宁大学物理系,辽宁沈阳110036

出　　处：《辽宁大学学报（自然科学版）》2004年第1期20-22,共3页Journal of Liaoning University：Natural Sciences Edition

摘　　要：在光致发光技术对多孔硅光学性质研究的基础上讨论了与多孔硅的微观结构有关的多孔硅的能带结构,用能量赝势法模拟计算出多孔硅的能带间隙.Basing on the studying on the optical properties of the porous silicon by photoluminescence technology, this paper discusses the energy band of the porous silicon which is related to the microstructure of the porous silicon, puts forward the main luminescence, calculates the band gap of the porous silicon by the empirical pseudopotental method in the end.

关 键 词：多孔硅 能带 发光机制 量子限制模型 表面态 能量赝势法 光致发光 

分 类 号：TN304.12[电子电信—物理电子学] O471.5[理学—半导体物理]