应用于MEMS的多孔硅的制备方法研究  

The Study on Preparing Methods of Porous Silicon Used in MEMS

作　　者：韩建忠[1] 倪国强[1] 崔梦[2] 胡明[2] 田斌[2] 

机构地区：[1]北京理工大学光电工程系,北京100081 [2]天津大学电子信息工程学院,天津300072

出　　处：《电子元件与材料》2004年第6期32-34,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(60071027;60371030)

摘　　要：采用化学腐蚀法、单槽电化学腐蚀法和双槽电化学腐蚀法来进行多孔硅的制备,通过对比这三种方法所制备多孔硅的表面形貌特征,发现双槽电化学腐蚀法与其它两种方法相比,具有孔径尺寸小(可达5～10 am)、均匀性好、腐蚀深度大(可达几百nm)等优点,其制备的多孔硅更符合在MEMS中应用的要求.最后对双槽电化学腐蚀法中腐蚀时间及电流密度对腐蚀速率的影响进行了研究.Porous silicon was prepared by chemical etching, single-cell electrochemical etching and double-cell electrochemical etching. The shape of porous silicon prepared by above-mentioned methods was observed. The results show that the double-cell electrochemical etching is the best preparing method. The porous silicon obtained by this method has the smallest hole diameter (5~10 nm), good uniformity, and large depth (several hundred nm). Finally, studied are the etching time and current density of double-cell electrochemical etching which affect the etching speed of the porous silicon.

关 键 词：多孔硅 MEMS 制备方法 双槽电化学腐蚀法 化学腐蚀法 单槽电化学腐蚀法 微电子机械系统 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN304.12