UTB结构量子化效应解析模型  

Quantum-Mechanical Analytical Model of Ultra-Thin Body Device

作　　者：王雅科[1] 刘晓彦 韩汝琦[1] 

机构地区：[1]北京大学微电子学研究所,北京100871

出　　处：《北京大学学报（自然科学版）》2004年第3期412-416,共5页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：国家自然科学基金 (90 2 0 70 0 4);863计划 (2 0 0 2AA1Z1510 )资助项目

摘　　要：通过在UTB结构中利用矩形势垒近似求解沟道的薛定谔方程 ,应用费米统计建立了UTBMOSFET阈值区载流子量子化的一个解析模型。并利用自恰求解薛定谔方程和泊松方程的结果对模型进行了验证 。Based on the theory of rectangular potential barrier of UTB device's surface, by solving Schrdinger's equation approximatively and using fermi statistical method, build a quantum-mechanical analytical model of subthreshold area of UTB MOSFET. Proof veracity of the model with poisson equation and Schrdinger's equation solved self-consistently. Relationship between change of threshold voltage and thickness of silicon film in UTB structure is analysed.

关 键 词：UTB结构 量子化效应 反型层电荷 

分 类 号：TN386.1[电子电信—物理电子学]