InGaAs MSM-PD及其与FET单片集成的进展  

Progress in InGaAs MSM-PD and Monolithically Integrated InGaAs MSM-PD/FET

作　　者：杨易[1] 施惠英[1] 

机构地区：[1]中国科学院上海冶金所,上海200233

出　　处：《半导体光电》1993年第3期238-242,249,共6页Semiconductor Optoelectronics

摘　　要：本文简要报道了具有势垒加强层的长波长InGaAs MSM-PD和单片集成MSM-PD/FET的进展。本文认为采用高阻掺Fe-InGaAs势垒加强层是有效和简单的,因为它兼有势垒加强和介于MSM-PD与FET结构之间的电隔离作用。Progress in long wavelegth GalnAs MSM-PD with barrier enhance- ment layer and monolithically integrated InGaAs-PD/FET is reported briefly in this paper.It is assumed that it should be effective and simple to use high resistive Fe- doped InGaAs barrier enhancement layer which exhibits the characteristic of barrier enhancement and electric isolation between the MSM-PD and the FET structure.

关 键 词：抛垒加强层 MSM-PD/FET 单片集成 

分 类 号：TN36[电子电信—物理电子学]