MoCVD生长重掺碳GaAs  

Heavily Doped p-type GaAs Grown by MOCVD

作　　者：关兴国[1] 章其麟[1] 李景[1] 任永一[1] 刘燕飞 

机构地区：[1]机电部第13研究所,石家庄050051

出　　处：《半导体情报》1993年第3期41-44,共4页Semiconductor Information

摘　　要：以四氧化碳(CCl_4)为掺杂剂进行了MOCVD生长掺碳GaAs的研究。p-GaAs外延层的最高空穴浓度可达1.8×10^(20)/cm^3,相应的迁移率为37cm^2/V.s。在重掺杂p-GaAs外延层中出现明显的能带收缩和晶格失配。The heavily doped p-type GaAs grown by MOCVD using carbon tetrachlonde (CCl_4) as the dopant source is studied. The high hole concentration in the epilayer was about 1.8×10^(20)/cm^3 with the mobility of 37cm^2/V. s. The enegygap shrinkage and lattice mismatch in heavy carbon doped GaAs was observed.

关 键 词：砷化镓 碳掺杂 能带晶格失配 

分 类 号：TN304.23[电子电信—物理电子学]