双极模式静电感应晶体管设计要点  

Design Criteria for a Bipolar Mode Static Induction Transistor

作　　者：李文宏[1] 张屏英 吴一清 

机构地区：[1]西安交通大学电子系 [2]八七七厂,西安710061

出　　处：《半导体情报》1993年第5期50-53,49,共5页Semiconductor Information

摘　　要：在新的阻断状态解析模型基础上,定量讨论了双极模式静电感应晶体管(BSIT)主要结构参数(外延层杂质浓度N_B、漏源间距w、栅区深度r及栅间距2a)与沟道势垒的关系,同时给出了定性解释。还分析了大注入通态特性与结构参数的关系,为BSIT的关态及通态设计提供了理论依据。Based on a new analytical model, the relationship is quantitatively discussed between main structure parameters (the doping of epilayer N_b, the space between source and drain w, the depth of gate region r, and the gate spacing 2a)and channel potential barrier. The qualitative explanation is also given. And the relationship of analyses between main structure parameters and on-state characteristics in high injection level. The theoretical criteria are given for the design of BSIT offstate and on-state.

关 键 词：静电感应 晶体管 势垒 设计 

分 类 号：TN32[电子电信—物理电子学]