双极模式静电感应晶体管特性分析  

Analyses on Characteristics of Bipolar Mode Static Induction Transistor

作　　者：李文宏 

机构地区：[1]西安半导体器件研究所,西安710061

出　　处：《半导体情报》1993年第6期28-33,共6页Semiconductor Information

摘　　要：在新的阻断状态全解析模型基础上,结合已有的理论成果,全面分析了双极模式静电感应晶体管(BSIT)的静态、动态和温度特性,并在分析中更加明确地论证了势垒钉扎等问题,为BSIT的设计提供了理论依据。On the basis of a new analytical model for the blocking state, the static and dynamic characteristics, and the temperature characteristics of the bipolar mode static induction transistor (BSIT) are analysed in full with the already achieved theoretical results. Some questions, such as potential barrier pinning are analysed explicitly, to provide theoretical criteria for the design of BSIT.

关 键 词：静电感应 晶体管 电场分布 势垒 

分 类 号：TN322[电子电信—物理电子学]