抑制SOS MOSFET漏电措施的研究  

Methods to Reduce Leakage Current of SOS MOSFET

作　　者：张兴[1] 石涌泉[1] 路泉 黄敞[1] 

机构地区：[1]陕西微电子学研究所,临潼710600

出　　处：《Journal of Semiconductors》1993年第6期381-384,共4页半导体学报（英文版）

摘　　要：经过大量的实验研究,我们从材料制备、版图设计及工艺过程等方面总结摸索出了一套能够有效抑制SOS器件漏电的措施,这主要包括双固相外延技术、环形栅技术、反应离子刻蚀形成硅岛工艺及背沟道注入工艺。采用这些措施之后,沟道长度为2μm的N沟和P沟环形栅晶体管的漏电分别为:2.5×10^(-12)A/μm 沟道宽度和1.5×10^(-12)A/μm沟道宽度。In SOS MOSFET,the leakage current is much larger than that in bulk MOSFET.To reduce the leakage current of SOS MOSFET,a set of silicon—film growth methods,such as double solid phase epitaxial regrowth(DSPE)technique,layout design,such as MOSFET of closed-loop-gate structure,and device processing steps,such as reaction ion etching,back channel implantation and low temperature process,are outlined,and the leakage current values of the n-and p-channel closed-loop-gate FETs are less than 3PA/μm channel width.

关 键 词：场效应晶体管 漏电措施 MOSFET 

分 类 号：TN386[电子电信—物理电子学]