GaAs器件中载流子非稳态输运的蒙特卡罗模拟  

Monte Carlo Simulation of Carrier Nonsteady-State Transport in GaAs Device

作　　者：王维航 叶润涛[1] 郭妙泉 余志平[2] 

机构地区：[1]浙江大学信息与电子工程系,杭州310008 [2]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》1993年第8期492-496,共5页半导体学报（英文版）

摘　　要：本文用多粒子蒙特卡罗方法对GaAs器件中的载流子非稳态输运过程进行了模拟,解释了载流子速度过冲效应对亚微米器件性能的影响。给出了一种由P集电区、P^+缓变基区和AlGaAs/GaAs异质发射结组成的N^+P^+PN新结构,预计将对缩短基区-集电区渡越时间有明显的作用。The nonsteady-state transport of the carriers in GaAs device is simulated by using themultiparticle Monte Carlo method. The results can explain the action of velocity overshoot effectof carriers for performance of the submicro devices, A new N^+P^+PN^+ structure consistingof a P-collector, a P^+-base and a AlGaAs/GaAs heterojunction emitter is supposed to obviouslyreduce the carrier transit time in the base and collector region.

关 键 词：GAAS器件 载流子 蒙特卡罗模拟 

分 类 号：TN303[电子电信—物理电子学]