强束流离子注入形成SOI结构时的温升效应的计算  

Calculation of Temperature Raise in Forming SOI Structure by Means of High Beam Current Ion Implantation

作　　者：田人和[1] 顾永俶[1] 卢武星[1] 张荟星[1] 

机构地区：[1]北京师范大学低能核物理研究所,北京100875

出　　处：《Journal of Semiconductors》1993年第8期484-491,共8页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文考虑了瞬态的热传导过程,用有限差分方法计算了恒流、脉冲、扫描三种离子注入形成SOI结构时的温升效应。计算结果表明,当能量大于150keV和注入剂量率超过1×10^(15)/cm^2·s时,对于一般的散热系统来说(传热系数H≈2×10^(-2)W/cm^2K),温升效应将是严重的。恒流、脉冲、扫描三种注入方式比较起来,以扫描注入的温升和温度波动为最严重,恒流注入为最低。目前,在低束流情况下,大多采用热靶(400—700℃)来制造 SIMOX或SIMNI材料,本文的计算结果指出,当剂量率超过8×10^(14)/cm^2·s时,晶片温度将超过1000K(H取2×10^(-2)W/cm^2K),这时将没有必要再用热靶,用室温靶就能满足温度要求。本文给出的理论计算方法对其它材料(如金属、陶瓷等)仍可应用。Taking account of the transient thermoconduction process, the temperature raise informing SOI structure by means of constant-current, pulse, and scanning ion-implantation iscalculated by using the finite difference method. The calculation results show that when theion energy is larger than 150 keV and the dose rate is over 1×10^(15)/cm^2s, the effect of temperatureraise will be serious. Among the constant-current, pulse, and scanning ion implantation,the temperature raise and fluctuation of the scanning ion implantation are most serious,and those of the constant-current one is least. At present, most of SIMOX or SIMNI materialsare prepared by using elevated-temperature target (400-700℃) under a low beam-current.However, the calculation results show that when the dose rate is over 8×10^(14)/cm^2·s,the temperature of wafer will be beyond 1000K, so that the heating for target is not needed,and a room temperature target is satisfied

关 键 词：离子注入 SOI结构 温升效应 计算 

分 类 号：TN305.3[电子电信—物理电子学]