用红外吸收谱和俄歇谱研究氮化硅的成分和杂质  

Investigation of Composition and Impurity in Silicon Nitride Using Infrared Absorption and Auger Electron Spectroscopy

作　　者：张秀淼[1] 石国华[1] 杨爱龄[1] 

机构地区：[1]杭州大学电子工程系,杭州310028

出　　处：《Journal of Semiconductors》1993年第10期644-647,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文报道了用国产DD-P250型等离子增强CVD设备制备的氮化硅膜的组分分析结果。用俄歇电子能谱分析了膜中Si/N组分比以及O、C等杂质的含量,研究了组分比与射频功率、SiH_4/NH_3流量比及衬底温度的关系,用红外吸收法分析了膜中氢的含量及其成键状态,结果表明氮化硅膜中的氢含量是较高的,且氢原子大部分都与氮原子键合,在一定的意义上,可以把此膜看作是硅-氮-氢三元系。The silicon nitride films produced by a Chinese-built PECVD system are analyzed and investigated.The composition of the films and the contaminations of carbon and oxygen in thefilms are detected by Auger Electron Spectroscopy,the dependence of the Si/N compositionalratio on the RF power, SiH_4/NH_3 flow ratio and suostrate temperature is also investigated.The infrared transmission spectrum is used to analyze the bonded hydrogen atoms in thefilms, the result indicates that the contamination of hydrogen is so high that in a sense thefilms may be regarded as a Si:N:H ternary system.

关 键 词：氮化硅 杂质 俄歇电子能谱 成份 

分 类 号：TN304.24[电子电信—物理电子学]