GaAs/Ga_(0.7)Al_(0.3)As超晶格中场致激子峰展宽机制的研究  

Study of Electric Field-Induced Exciton Linewidth Broadening in Short-Period GaAs/GaAlAs Superlattices

作　　者：张耀辉[1] 江德生[1] 李锋[1] 吴荣汉[1] 周均铭[2] 梅笑冰[2] 

机构地区：[1]半导体超晶格国家重点实验室中国科学院半导体研究所,北京100083 [2]中国科学院物理研究所分子束外延实验室,北京100080

出　　处：《Journal of Semiconductors》1993年第10期652-657,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：我们利用光电流谱在10—300K温度范围内研究了GaAs/Ga_(0.7)Al_(0.3)As(35A/35A)短周期超晶格中的Wannier-Stark效应,实验发现0h激子峰随电场的增加而展宽。我们把激子峰的场致展宽归因于:Wannier-Stark局域化使界面的涨落对电子态的散射增加而使激子峰展宽。这种与电场有关的散射机制会使L.Esaki和Tsu所预期的超晶格的负微分电阻效应减小。We have investigated Wanniier-Stark effect in GaAs/GaAlAs superlattices under electricfields by photocurrent spectroscopy measurements at the range of 10-300K temperatures.The Oh stark ladder exciton linewidth was found to increase significantly with electric field atlow temperatures. This increased broadening is attributed to a stronger scattering to electronicstates by interface roughness due to Wannier-Stark localization. The scattering mechanismrelated to electric field will weaken the negative differetial conductance effects in the directionof superlattices predicted by L. Esaki and R. Tsu.

关 键 词：GAAS/GAALAS 超晶格 激子峰 电场 

分 类 号：TN304.36[电子电信—物理电子学]