用椭偏光学方法研究Ge_xSi_(1-x)/Si超晶格结构  

Structure Characterization of Ge_xSi_(1-x)/Si Superlattices by Ellipsometry

作　　者：秦林洪 郑有炓[1] 张荣[1] 

机构地区：[1]南京大学物理系,南京210008

出　　处：《Journal of Semiconductors》1993年第10期605-611,共7页半导体学报（英文版）

摘　　要：本文讨论分析了半导体超晶格的椭偏光学性质,首次采用多入射角椭圆偏振光学方法研究了半导体超晶格结构,实验测量给出了Ge_xSi_(1-x)/Si超晶格各子层的厚度、复折射率和组份等基本结构参量。本方法测量简便,重复性好,对样品无破坏作用,可作为半导体超晶格结构的一种有效的表征手段。A new method of characterizing semiconductor superlattices (SL) with multiple-angle-ofincidence(MAI)ellipsometry is presented for the first time.The ellipsometric properties ofSL are studied, Ge_xSi_(1-x)/Si SL samples are measured, and various parameters of SL structure,Such as the thickness, complex refractive index and composition of each sublayer, areachieved precisely and simultaneously. The method is proved to be simple, nondestructive andhigh effective.

关 键 词：半导体材料 GESI/SI 超晶格 结构 

分 类 号：TN304.2[电子电信—物理电子学]