蓝宝石上硅膜(SOS)肖特基结注入电流检测的电子自旋共振及Si/Al_2O_3界面缺陷  

ESR of Silicon Film on Sapphire Detected by Injected Current and the Defects on the Si/Al_2O_3 Interface

作　　者：傅济时[1] 吴恩[1] 秦国刚[1] 朱美栋 郁元桓[3] 

机构地区：[1]北京大学物理系,北京100871 [2]北京大学无线电系,北京100871 [3]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1993年第11期712-714,共3页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：我们用高灵敏的肖特基结注入电流检测磁共振方法对蓝宝石上外延硅膜进行了研究。实验观察到一各向同性非对称的磁共振谱,经拟合它由线宽10^(-3)T,g值分别为2.0055及2.012的二线组合而成,二线强度比3.7:1。前者是硅悬挂键,后者为非晶硅价态尾态共振。实验证实该磁共振信号来自于Si/Al_2O_3界面。The investigation of silicon film on sapphire was performed using the magnetic resonancedetected by injected current through the Schottky junction. An isotropic and asymmetric spectrumwas observed. By simulation the spectrum consists of two lines with the line widthabout 10^(-3)T. The g value is 2. 0055 and 2. 012 respectively, and the intensity ratio is 3. 7:1.The experiments show that the spectra come from defects on Si/Al_2O_3 interface. Maybe theline of g=2. 0055 comes from Si dangling bond and another one comes from the valence-bandtailstate of amorphous silicon.

关 键 词：蓝宝石 硅膜 界面 缺陷 检测 共振 

分 类 号：TN304.07[电子电信—物理电子学]