漏雪崩应力下热载流子注入引起的MOSFET退变特性研究  

?Study on the Characteristics of Drain Avalanche Stress Induced Hot Carrier Effects in N-Channel Submicron MOSFET's

作　　者：程玉华 李瑞伟[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所

出　　处：《Journal of Semiconductors》1993年第12期723-727,共5页半导体学报（英文版）

摘　　要：本文对亚微米MOSFET在漏雪崩恒流应力(DAS)条件下热载流子注入引起的退变现象做了实验研究。实验结果表明:在一般的恒流应力条件下,栅氧化层中由空穴注入形成的空穴陷阱电荷对器件特性起主要影响作用。恒流应力过程中,任何附加的电子注入都可使器件退变特性发生明显变化,实验结果还证实,漏雪崩应力期间形成的空穴陷阱电荷可明显降低器件栅氧化层的介质击穿特性。An experimental investigation on the hot carrier effects in N-channel submieronMOSFET's at drain avalanche stress (DAS) is presented. The experiment results show thatunder DAS, hot holes will be injected into gate oxide and form positive trap charges.The resultsshow also that any additional electron-injection during drain avalanche stress may causedistinct change in the degradation characteristics.In addition, the positive trap chargesformed by DAS will degrade the breakdown perfonmance of the gate oxide.

关 键 词：场效应晶体管 雪崩 载流子注入 

分 类 号：TN386[电子电信—物理电子学]