改进sol-gel技术BST薄膜的制备及性能研究  

Electrical properties of BST thin films fabricated by a modified sol-gel process

作　　者：姜胜林[1] 曾亦可[1] 刘少波[2] 刘梅冬[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]中国科学院电工研究所,北京100080

出　　处：《功能材料》2004年第3期365-367,共3页Journal of Functional Materials

基　　金：国家自然科学基金重大研究计划资助项目(90201028);国家高技术研究发展计划资助项目(2002AA325080)

摘　　要：　为了制备高性能BST薄膜,采用改进的溶胶 凝胶(sol gel)方法在Pt/Ti/SiO2/Si基片上制备出了不同结构、不同组成的BST薄膜;研究了BST薄膜的微观结构及其介电、铁电性能。XRD分析表明,当热处理温度为750℃时,得到完整钙钛矿结构的薄膜材料。SEM电镜显示,含种子层的Ⅱ、Ⅲ、Ⅳ3种不同类型的BST薄膜的结晶状况有很大改善。得到的BST20薄膜的介电峰温区覆盖常温段,介电常数为405,介电损耗为0.011,剩余极化强度为Pr=2.3μC·cm-2,矫顽场为Ec=45kV/cm。A modified sol-gel process was used to get the higher-performance BST thin films .The BST thin films produced on the substrate of Pt/Ti/SiO_2/Si had different composites and structures.The microstructure , morphology and the electrical properties of the prepared BST thin films were investigated via X-ray diffractometry, scanning electron microscopy and resistance analyser .The results show that the optimum process for BST films was RTA 750℃×20min and with sandwich structure seed layers. BST20 film with good resistivity, comparative dielectric and ferroelectric properties is basically suitable for the detecting materials of UFPA. The films with the dielectric constant of 405,loss tangent of 0.011,remanent polarization of 2.3μC·cm^(-2),a coercive field of 45kV/cm can be gained by the modified sol-gel process.

关 键 词：改进sol-gel方法 BST薄膜 电性能 

分 类 号：TN304[电子电信—物理电子学]