功率晶体管峰值结温电学测量技术中的热模型  

A Thermal Model for Electrical Measurement of the Peak Junction Temperature of Power Transistors

作　　者：王明珠[1] 吕长志[1] 高光渤 

机构地区：[1]北京工业大学电子工程学系

出　　处：《北京工业大学学报》1993年第4期102-107,共6页Journal of Beijing University of Technology

基　　金：电子工业部"七五"科技攻关项目资助

摘　　要：描述了功率晶体管峰值结温电学测量技术中采用的三维两层结构模型,给出其解析解及计算程序框图,用此模型将电学测量的平均结温修正为峰值结温,修正可达10～30℃, 以红外微热像仪测量的热场为标准,峰值电学法的误差小于8％,标准电学法的误差则可达50％。We described thermal model of three dimenisiond for a two-layer structure, which used in the electrical measurement of the peak junction tempersture of power transistors. The analytical solutions of this model and flow chart of the calculating program are also given. Using this model, we can correct the electrically mesuured average temperature on the surface of the chip to the peak junction temperature. This modification may be up to 10 - 30 ℃ . Compared the measured thermal field by infrared microradiometer, the measuring error of the electrical peak technique is within 8% whereas the error of the standard electrical technique may be up to 50% on the same conditions.

关 键 词：功率晶体管 峰值结温 电学测量 

分 类 号：TN323.4[电子电信—物理电子学]