以SiF_4+H_2为气源PECVD法低温制备多晶硅薄膜  

PREPARATION OF POLYCRYSTALLINE SILICON THIN FILMS BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

作　　者：邱春文[1] 石旺舟[1] 黄翀[1] 

机构地区：[1]汕头大学物理系,汕头515063

出　　处：《太阳能学报》2004年第3期333-336,共4页Acta Energiae Solaris Sinica

摘　　要：采用常规的PECVD法在低温(≤400℃)条件下制得大颗粒(直径>100nm)、高迁移率(～20cm2/vs),择优取向(220)明显的多晶硅薄膜。选用的反应气体为SiH4和H2混合气体。加入少量的SiH4后,沉积速率提高了将近10倍。通过本实验,我们认为在低温时促使多晶硅结构形成的反应基元应是SiFmHn(m+n≤3),而不可能是SiHn(n≤3)基团。That poly-Si films with large grains(>100 nm in diameter) and high carrier mobility(～20cm^2/vs)were fabricated at relatively high deposition rate(～9.2/s) and low temperatures(≤400℃) by conventional PECVD system.In addition,it was found the grains' preferential orientation(220) was obvious.The films was obtained using SiF_4 and H_2 mixture as reaction gas soure;when a little amount SiH_4 was added,the deposition rata was increased to almost 10 times.On the experiments we confirm that only the SiF_mH_n(m+n≤3) but the SiH_n(n≤3) at low temperatures has contribution to poly-Si films growing.

关 键 词：多晶硅薄膜 瞰 Ⅷ法 低温制备 

分 类 号：TM614[电气工程—电力系统及自动化]