垂直腔面发射激光器材料的X射线双晶衍射分析  

A Study on Characteristics of VCSEL Material Structure

作　　者：刘文莉[1] 李林[1] 钟景昌[1] 张永明[1] 赵英杰[1] 郝永琴[1] 王勇[1] 苏伟[1] 晏长岭[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《长春理工大学学报（自然科学版）》2004年第2期35-36,34,共3页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国防科技重点实验室基金项目 ( 5 14 5 6 ZS3 60 3 )

摘　　要：利用X射线双晶衍射方法 ,测定了垂直腔面发射激光器 (VCSEL)材料的衍射回摆曲线 ,除了主衍射峰 (“0”级衍射峰外 ) ,还观察到一级和二级卫星峰。同时对实验样品的双晶衍射回摆曲线中衍射峰的劈裂现象进行了理论分析。“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近 ,表明晶格具有很高的完整性。由这些衍射峰之间的角距离 ,计算出了VCSEL材料的周期D及Al含量x值。The analysis of VCSEL material structure is made of X-ray double crystal diffraction. The structure parameters of VCSEL is obtained from the rocking curve. The first and second satellite peaks around the main(“0” level) diffraction peak appear in the VCSEL rocking curve. Interference fringes and splitting peaks in double crystal rocking curves are analyzed theoretically. The FWHM of diffraction peaks of “0” level and GaAs substrate are quite close, showing much higher integrity of the crystal lattice. The VCSEL period D and Al concentration x have been obtained from the angle distance △θ. The experimental results show that the grown structure is the same as the designed structure.

关 键 词：X射线双晶衍射 回摆曲线 卫星峰 

分 类 号：TN304[电子电信—物理电子学]