离子束辅助沉积制备多晶Al_2O_3薄膜  

POLYCRYSTALLINE Al_2O_3 FILM PREPARED BY IBAD

作　　者：王晨[1] 杨杰[2] 范玉殿[2] 陶琨[2] 

机构地区：[1]清华大学材料科学与工程系,北京市100084 [2]清华大学

出　　处：《材料科学进展》1993年第6期521-525,共5页

基　　金：国家自然科学基金 69391200

摘　　要：利用电子枪蒸镀 Al_2O_3,同时辅以 Ar 离子轰击的离子束辅助沉积方法(IBAD)制备 Al_2O_3薄膜,并与单纯电子枪蒸镀方法(PVD)制备的薄膜进行了结构和表面形貌的比较。IBAD 法可以得到结构均匀致密的γ-Al_2O_3晶态薄膜,而 PVD 方法仅能得到非晶态疏松的结构。分析结果表明,薄膜沉积过程中,提高离子轰击能量和增加基片加热温度在一定程度上具有相同的效果。Alumina films were prepared by electron beam evaperation from α-Al_2O_3 with10 keV or 20 keV argon ion bombardment.The temperature of substrates was maintained atroom temperature(RT)or 300℃.The structure and topography were investigated by XRD,XPS,TEM and SEM.The alumina films were amorphous,whereas polycrystalline γ-Al_2O_3could be obtained at 20 keV argon ion bombardment as well as 10 keV argon ion bombardmentat 300℃.It is found that increasing of the ion bombardment energy and the substrate tempera-ture have the same effect on forming γ-Al_2O_3 structure.

关 键 词：离子束 氧化铝 薄膜 物理气相沉积 

分 类 号：TG174.453[金属学及工艺—金属表面处理]