Growth Rate of a-Si∶H Film Influenced by Magnetic Field Gradient in MWECR CVD Plasma System  

MWECR CVD系统中磁场梯度对a-Si:H薄膜沉积速率的影响(英文)

作　　者：胡跃辉[1] 吴越颖[1] 陈光华[1] 王青[1] 张文理[1] 阴生毅[1] 

机构地区：[1]北京工业大学材料学院,北京100022

出　　处：《Journal of Semiconductors》2004年第6期613-619,共7页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号 :G2 0 0 0 0 2 82 0 1)~~

摘　　要：The magnetic field profiles,which are produced by three ways in the deposition chamber and plasma chamber of single coil divergent field MWECR CVD system,are investigated.The magnetic field gradient of these magnetic field profiles is obtained quantitatively by using Lorentz fit.The results indicate that the gradient value of the magnetic field profile near by the substrate,which is produced by a coil current with 137.7A if a SmCo permanent magnet is equipped under the substrate holder,is the largest;when the SmCo permanent magnet is taken away,the larger one is produced by the coil current with 137.7A and the smallest one produced by a coil current with 115.2A.High deposition rate of a-Si∶H film is observed near by the substrate with high magnetic field gradient.But uneven deposition rate along the radius of the sample holder is also found by infrared analysis technology when sample is deposited in magnetic field profile,which is produced by the coil current with 137.7A if the SmCo permanent magnet is equipped under the substrate holder.为了定量地得到磁场梯度对a Si∶H薄膜沉积速率的影响 ,对单磁场线圈分散场MWECRCVD系统等离子体室和沉积室中用三种方法得到的磁场形貌进行了研究 .通过洛伦兹拟合的方法定量地得到了这些磁场形貌的磁场梯度 .结果表明 ,样品台下面放置钐钴永磁体并使磁场线圈电流为 137 7A时其衬底附近磁场梯度值最大 ,样品台下面无钐钴永磁时 ,磁场线圈电流分别为 137 7A和 115 2A的磁场梯度值依次为次之和最小 .制备a Si∶H薄膜时 ,在衬底附近具有高的磁场梯度值可以得到高的沉积速率 .通过红外吸收谱技术分析 ,虽然样品台下面放置钐钴永磁体并使磁场线圈电流为 137 7A下能得到最大的沉积速率 ,但是沿样品台半径方向沉积速率呈现很明显的不均匀分布 .

关 键 词：magnetic field gradient Lorentz fit a-Si∶H film deposition rate MWECR CVD deposition system 

分 类 号：TN3048[电子电信—物理电子学]