重掺杂直拉硅单晶氧沉淀及其诱生二次缺陷  

Oxygen Precipitation and Induced Defects in Heavily Doped Czochralski Silicon

作　　者：黄笑容[1] 杨德仁[1] 沈益军[1] 王飞尧[1] 马向阳[1] 李立本[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2004年第6期662-667,共6页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :5 0 0 3 2 0 10 ;60 2 2 5 0 10 );国家高技术研究发展计划 (No.2 0 0 2AA3Z1111)资助项目~~

摘　　要：研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响 .实验结果表明 :重掺p型 (硼 )硅片氧沉淀被促进 ,氧沉淀密度高但无诱生二次缺陷 ;重掺n型 (磷、砷、锑 )硅片氧沉淀受抑制 ,氧沉淀密度低却诱生出层错 ;不同掺杂元素及浓度对重掺n型硅片氧沉淀抑制程度不同 ,并对氧沉淀诱生层错的形态产生影响 .讨论了重掺硅单晶中掺杂元素影响氧沉淀及其诱生二次缺陷的机理 ,并利用掺杂元素 本征点缺陷作用模型和原子半径效应模型对实验结果进行了解释 .The effect of dopants on oxygen precipitation and induced defects in heavily doped Czochralski (CZ) silicon is investigated.It is found that oxygen precipitation is enhanced in p-type (B) heavily doped silicon,but no induced defects are detected .However,oxygen precipitation is retarded in n-type heavily doped silicon and stacking faults are also observed.Furthermore,the oxygen precipitation and induced stacking faults are affected by the type and concentration of dopants (P,As,Sb) .Based on these facts,the effect mechanism of dopants on oxygen precipitation and induced defects in heavily doped silicon are discussed.Dopant-intrinsic point defect interaction and covalent radii effect of dopant are plausible explanation of the results.

关 键 词：重掺杂直拉硅 氧沉淀 缺陷 

分 类 号：TN30412[电子电信—物理电子学]