Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长  

GaN Growth on Si and Si-SiO_2-Si Compliant Substrates

作　　者：王军喜[1] 王晓亮[1] 刘宏新[1] 胡国新[1] 李建平[1] 李晋闽[1] 曾一平[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2004年第6期678-681,共4页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :60 13 60 2 0 );国家重点基础研究发展规划(批准号 :G2 0 0 0 0 683 );国家高技术研究发展计划及中国科学院资助项目~~

摘　　要：使用MBE方法在Si(111)衬底和Si SiO2 Si柔性衬底上生长了GaN外延层 ,并对在两种衬底上生长的样品进行了对比分析 .在柔性衬底上获得了无裂纹的外延层 ,其表面粗糙度为 0 6nm .研究了GaN外延层中的应力及其光学性质 ,光致发光测试结果表明柔性衬底上生长的外延层中应力和杂质浓度明显低于直接生长在Si衬底上的样品的值 .GaN films are deposited on Si and Si-SiO 2-Si compliant substrates by MBE(molecular beam epitaxy) technique and compared optical properties and residual strain with that of the obtained films on the two-kind of substrates.Investigation of the surface morphology shows that crack-free GaN epilayers are obtained on compliant substrates with a value of RMS(root mean square) of 0.6nm.Photoluminescence measurements indicate a great reduce of the residual strain and impurity density in GaN films grown on compliant substrates compared with those on Si substrates.The results show that Si-SiO 2-Si compliant substrates are promising as a substrate for GaN material growth.

关 键 词：分子束外延 GaN 柔性衬底 光致发光 

分 类 号：TN304.054[电子电信—物理电子学]