6H-SiCOI MESFET器件结构参数对其特性的影响  

Effects of Structure Parameters of 6H-SiCOI MESFET's on Its Characteristics

作　　者：龚欣[1] 张进城[1] 郝跃[1] 李培咸[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《微电子学》2004年第3期257-260,264,共5页Microelectronics

基　　金：国防预先研究项目资助课题(41308060106)

摘　　要：　采用二维器件仿真软件Medici,模拟分析了SiCOI(绝缘衬底上SiC)MESFET器件的结构参数,如有源层掺杂浓度、栅长和有源层厚度等,对器件特性(阈值电压和跨导)的影响。结果表明,其结构参数对器件特性有较大影响。同时,对所得结果从内部物理机制上进行了分析。Using two-dimensional device simulator Medici, effects of structural parameters of SiCOI (SiC on Insulator) MESFET's on its characteristics (threshold voltage and transconductance) are studied, such as doping concentration and thickness of the active layer, and gate length. Simulation results show that structure parameters have a great effect on the characteristics of SiCOI MESFET's. Results obtained from this work are discussed with respect to its physical mechanism.

关 键 词：SICOI MESFET 结构参数 

分 类 号：TN304.24[电子电信—物理电子学]