GaN基微波半导体器件研究进展  

Research progress of GaN-based microwave devices

作　　者：杨燕[1] 郝跃[1] 张进城[1] 李培咸[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《西安电子科技大学学报》2004年第3期367-372,421,共7页Journal of Xidian University

基　　金：国家重大基础研究(973)项目;国家部委预研资助项目(41308060106)

摘　　要：GaN基微波器件以其优良的特性而在微波大功率方面具有应用潜力.对GaN半导体材料作了比较和讨论,说明了GaN材料在微波大功率应用方面的优势,并阐述了新型GaN基微波器件的最新进展,通过与其他微波器件的比较表明了GaN调制掺杂场效应晶体管在微波大功率应用方面所具有的明显优势.GaN-based microwave devices possess potential in microwave and high power applications, and related researches have been a hotspot in the current compound semiconductor area. A comparison and discussion of GaN's show its great advantages in microwave and high power application. The newest development of several GaN-based microwave devices is also introduced. The advantage of GaN Modulation Doped Field Effect Transistors(MODFETs) in microwave and high power applications is compared with that of other microwave devices finally.

关 键 词：GAN 微波大功率 调制掺杂场效应晶体管 

分 类 号：TN304[电子电信—物理电子学]