电子束蒸发硅薄膜的设计  

Design of Electron Beam Evaporated Silicon Thin Film

作　　者：邱美叶 孔惠颖 郑照轩 孙康迅 施钧策 张弛 周金辉 李轩 罗薇 徐东昕 乔忠良 李林 曲轶 李再金 

机构地区：[1]海南省激光技术与光电功能材料重点实验室,海南省院士团队创新中心,海南师范大学物理与电子工程学院,海口 海南

出　　处：《材料化学前沿》2024年第1期22-28,共7页Advances in Material Chemistry

摘　　要：硅在常温下性质稳定、红外透明区宽,所形成的硅薄膜质硬、红外区折射率高是一种较理想的红外光学薄膜材料。在红外相机、热成像仪、红外光谱仪、红外波片等方面得到广泛应用。本文分析了光学薄膜设计理论,研究了衬底材料和镀膜材料特性,通过TFCalc薄膜设计软件设计和优化石英玻璃和蓝宝石不同的衬底材料下薄膜厚度为900 nm的硅薄膜特性,设计结果表明在近红外波段薄膜消光系数1 × 10−3在700~1000 nm的厚度下模拟硅薄膜的光学性能不同。Silicon is stable at room temperature and has a wide infrared transparent region, the silicon film formed is hard and has a high refractive index in the infrared region, which is an ideal material for infrared optical film. It is widely used in infrared camera, thermal imager, infrared spectrometer, infrared wave plate and so on. This paper analyzes the optical thin film design theory, studies the substrate material and coating material characteristics, through the TFCalc film design software de-sign and optimization of quartz glass and sapphire under different substrate materials, the film thickness of 900 nm silicon film characteristics, design results show that in the near-infrared wave-length band thin film extinction coefficient of 1 × 10−3 in the thickness of 700~1000 nm simulation of silicon thin film Optical properties are different.

关 键 词：红外光学薄膜 电子束蒸发 硅薄膜 

分 类 号：O48[理学—固体物理]