氮化镓基谐振腔发光二极管发展近况  

Development of GaN-Based Resonant Cavity Light Emitting Diodes

作　　者：王元诚 李建军[1] 王海阔 袁泽旭 王梦欢 邹德恕[1] 韩军[1] 邓军[1] 

机构地区：[1]北京工业大学光电子技术教育部重点实验室,北京

出　　处：《光电子》2017年第4期127-140,共14页Optoelectronics

摘　　要：共振腔发光二极管(Resonant Cavity Light emitting Diodes, RCLED)可视为垂直腔发射激光器(Vertical Cavity Surface Emitting Laser, VCSELs)与传统发光二极管(Light-Emitting Diode, LED)二者的结合,具备了传统发光二极管(LED)和垂直腔面激光器(VCSEL)两者的优点。相比于传统LED,RCLED出射的光具有更大的光强、提取效率和调制带宽,以及更好的方向性、光谱纯度和温度可靠性。近年来,国际上出现了许多针对砷化镓基红光波段、氮化镓基蓝绿光波段、近紫外波段的垂直腔发光二极管的相关报道,这些研究成果对于工业、医疗、通讯等领域非常有吸引力。然而,对于该方面研究工作的概述类文章却很少。本文主要对近年来以GaN为基础的蓝光波段RCLED发展情况进行概述。Resonant Cavity Light emitting Diodes (RCLED) can be regard as the combination of Vertical Cavity Surface Emitting Laser (VCSEL) and Light-Emitting Diode (LED). It has the advantage of both LED and VCSEL. Comparing with common led, RCLED has higher power, efficiency and modulation bandwidth, as well as better directionality, spectral purity and temperature reliability. In recent years, many research about GaAs-based red RCLED, GaN-based blue/green as well as near- ultraviolet RCLED have been reported, which is much attractive for industry, medical care and communication . However, there are few generalizations in this field. This paper summarizes the development of GaN-based blue RCLED in recent years.

关 键 词：共振腔 发光二极管 氮化镓 提取效率 

分 类 号：TN3[电子电信—物理电子学]