Mixed-Mode Device Modeling of DGMOS RF Oscillators  

作　　者：Mourad Bella Saida Latreche Samir Labiod Christian Gontrand 

机构地区：[1]Electronic Department of Engineering and Technology, University Constantine 1, Constantine, Algeria [2]Institute of Nanotechnology of Lyon (INL), University of Lyon, Lyon, France

出　　处：《Circuits and Systems》2014年第1期18-26,共9页电路与系统（英文）

摘　　要：A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations.A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations.

关 键 词：DGMOS TRANSISTOR COLPITTS OSCILLATOR RADIOFREQUENCY Mixed Mode Simulation ISF Function Noise 

分 类 号：R73[医药卫生—肿瘤]