Microscopic Study of Defect Luminescence between 0.72 - 0.85 eV by Optical Microscopy  

作　　者：Dominik Lausch Christian Hagendorf 

机构地区：[1]Fraunhofer Center for Silicon Photovoltaics CSP, Halle, Germany.

出　　处：《Microscopy Research》2014年第1期9-12,共4页显微镜研究（英文）

摘　　要：In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a μm-scale.In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a μm-scale.

关 键 词：DEFECT LUMINESCENCE Recombination Active DEFECTS Silicon Solar Cells Optical MICROSCOPY 

分 类 号：R73[医药卫生—肿瘤]