Quartz Crystal Microbalances for Evaluating Gas Motion Differences between Dichlorosilane and Trichlorosilane in Ambient Hydrogen in a Slim Vertical Cold Wall Chemical Vapor Deposition Reactor  

作　　者：Mana Otani Toshinori Takahashi Hitoshi Habuka Yuuki Ishida Shin-Ichi Ikeda Shiro Hara Mana Otani;Toshinori Takahashi;Hitoshi Habuka;Yuuki Ishida;Shin-Ichi Ikeda;Shiro Hara(Department of Chemistry Applications and Life Science, Yokohama National University, Hodogaya, Yokohama, Japan;National Institutes of Advanced Science and Technology, Umezono, Tsukuba, Japan;Minimal Fab Development Association, Umezono, Tsukuba, Japan)

机构地区：[1]Department of Chemistry Applications and Life Science, Yokohama National University, Hodogaya, Yokohama, Japan [2]National Institutes of Advanced Science and Technology, Umezono, Tsukuba, Japan [3]Minimal Fab Development Association, Umezono, Tsukuba, Japan

出　　处：《Advances in Chemical Engineering and Science》2020年第3期190-200,共11页化学工程与科学期刊（英文）

摘　　要：A dichlorosilane gas and a trichlorosilane gas in ambient hydrogen were evaluated to show their different gas flow motions in a slim vertical cold wall chemical vapor deposition reactor for the Minimal Fab system. This evaluation was performed for improving and controlling the film qualities and the productivities, using two quartz crystal microbalances (QCM) installed at the </span><span style="font-family:Verdana;">inlet and exhaust of the chamber by taking into account that the QCM frequency corresponds to the real time changes in the gas properties.</span><span style="font-family:Verdana;"> Typically, the time period approaching from the inlet to the exhaust was shorter for the trichlorosilane gas than that for the dichlorosilane gas. The trichlorosilane gas was shown to move like plug flow, while the dichlorosilane gas seemed to be well mixed in the entire chamber.A dichlorosilane gas and a trichlorosilane gas in ambient hydrogen were evaluated to show their different gas flow motions in a slim vertical cold wall chemical vapor deposition reactor for the Minimal Fab system. This evaluation was performed for improving and controlling the film qualities and the productivities, using two quartz crystal microbalances (QCM) installed at the </span><span style="font-family:Verdana;">inlet and exhaust of the chamber by taking into account that the QCM frequency corresponds to the real time changes in the gas properties.</span><span style="font-family:Verdana;"> Typically, the time period approaching from the inlet to the exhaust was shorter for the trichlorosilane gas than that for the dichlorosilane gas. The trichlorosilane gas was shown to move like plug flow, while the dichlorosilane gas seemed to be well mixed in the entire chamber.

关 键 词：Minimal Fab Chemical Vapor Deposition Reactor Quartz Crystal Microbalance Silicon Epitaxial Growth TRICHLOROSILANE DICHLOROSILANE 

分 类 号：TP2[自动化与计算机技术—检测技术与自动化装置]